IRF7105TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF7105TRPBF

Description:

MOSFET N/P-CH 25V 8-SOIC

Stock:

1305

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.14

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Parameters

Current at 25 ° C - continuous drain (Id)

3.5A,2.3A

Drain source voltage (Vdss)

25V

FET Type

N and P Channel

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

27nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

330pF @ 15V

On resistance (maximum) for different Ids and Vgs

100 mΩ @ 1A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

TR,CT

series

HEXFET®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载IRF7105TRPBF.pdf

IRF7105TRPBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1305,Price reference "real-time change" China/Hongkong。 IRF7105TRPBF package/specs, Download IRF7105TRPBF、Datasheet。